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03/30/12 IRLH6224PBF hexfet power mosfet notes through are on page 9 features and benefits www.irf.com 1 applications ? battery protection switch
pqfn 5x6 mm note form quantity irlh6224trpbf pqfn 5mm x 6mm tape and reel 4000 irlh6224tr2pbf pqfn 5mm x 6mm tape and reel 400 orderable part number package type standard pack v ds 20 v v gs max 12 v r ds(on) max (@v gs = 4.5v) 3.0 (@v gs = 2.5v) 4.0 q g typ 44 nc i d (@t c(bottom) = 25c) 80 a m absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range -55 to + 150 3.6 0.029 52 max. 28 67 400 12 20 22 105 80 v w a c features benefits low thermal resistance to pcb (< 2.4c/w) enable better thermal dissipation 100% rg tested increased reliability low profile (<1.2mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability

2 www.irf.com d s g thermal resistance parameter typ. max. units r ??? 2.4 r ??? 34 c/w r ??? 35 r 10 ??? 22 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 20 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 5.0 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 2.3 3.0 ??? 3.2 4.0 v gs (t h ) gate threshold voltage 0.5 0.8 1.1 v v gs (th) gate threshold voltage coefficient ??? -4.2 ??? mv/c i ds s drain-to-source leakage current ??? ??? 1 ??? ??? 150 i gs s gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 150 ??? ??? s q g total gate charge ??? 86 ??? nc q g total gate charge ??? 44 ??? q gs1 pre-vth gate-to-source charge ??? 3.8 ??? q gs2 post-vth gate-to-source charge ??? 4.7 ??? q gd gate-to-drain charge ??? 8.5 ??? q godr gate charge overdrive ??? 27 ??? q sw switch charge (q gs2 + q gd ) ??? 13 ??? q oss output charge ??? 30 ??? nc r g gate resistance ??? 2.0 ??? . 10 100 0 avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 38 57 ns q rr reverse recovery charge ??? 82 125 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 50 a a v gs = 2.5v, i d = 16a v gs = 4.5v v ds = 16v, v gs = 0v, t j = 125c m v ds = 16v, v gs = 0v v gs = 10v, v ds = 15v, i d = 20a typ. ??? r g =1.8 v ds = 10v, i d = 20a i d = 20a i d = 20a v gs = 0v v ds = 10v v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v t j = 25c, i f = 20a, v dd = 15v di/dt = 300a/ s t j = 25c, i s = 20a, v gs = 0v showing the integral reverse p-n junction diode. conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1.0ma v gs = 4.5v, i d = 20a conditions max. 125 20 ? = 1.0mhz ??? ??? 400 ??? ??? 67 mosfet symbol na ns a pf nc v ds = 10v ??? v gs = 12v v gs = -12v

www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.00v 4.50v 2.50v 2.30v 2.00v 1.75v bottom 1.50v 60 s pulse width tj = 25c 1.50v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.00v 4.50v 2.50v 2.30v 2.00v 1.75v bottom 1.50v 60 s pulse width tj = 150c 1.50v 0 1 2 3 4 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 10v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 16v v ds = 10v vds= 4.0v i d = 20a

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50 a i d = 250 a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse operation in this area limited by r ds (on) limited by package 100 sec 1msec 10msec dc 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 i d , d r a i n c u r r e n t ( a ) limited by package

www.irf.com 5 fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 0 2 4 6 8 10 12 v gs, gate -to -source voltage (v) 0 2 4 6 8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 20a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.7a 9.3a bottom 20a

6 www.irf.com fig 16. for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

+ - + + + - - - ? !" # $ ? ! % &'&& ? # (( ? &'&& ) ! ' 1k vcc dut 0 l s

www.irf.com 7 pqfn 5x6 outline "e" package details

http://www.irf.com/technical-info/appnotes/an-1154.pdf note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 5x6 outline "e" part marking xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code)

8 www.irf.com pqfn 5x6 outline "e" tape and reel reel dimensions note: controlling dimensions in mm std reel quantity is 4000 parts. standard option (qty 4000) min 329.5 20.9 12.8 1.7 97 ref 13 code a b c d e f g max 330.5 21.5 13.5 2.3 99 17.4 14.5 min 12.972 0.823 0.504 0.067 3.819 0.512 max 13.011 0.846 0.532 0.091 3.898 0.571 metric imperial tr1 option (qty 400) imperial min 6.988 0.823 0.520 0.075 2.350 0.512 max 178.5 21.5 13.8 2.3 66 12 14.5 min 177.5 20.9 13.2 1.9 65 ref 13 metric max 7.028 0.846 0.543 0.091 2.598 0.571 $*

www.irf.com 9 qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 0.63mh, r g = 50 , i as = 20a. pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material.
calculated continuous current based on maximum allowable junction temperature. package is limited to 80a by die-source to lead-frame bonding technology ir world headquarters: 101n. sepulveda., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/2012 data and specifications subject to change without notice. ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level indus trial ?? (per je de c je s d47f ??? guidelines )

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